Browse NSN 5962-01-075-7602 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 18007, 82S137F, 932883-204, B2052-204, CC5194-204 listed under NSN 5962-01-075-7602 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Mmi Amd, Philips Semiconductors Ltd, Raytheon Company, Intersil Inc, Advanced Micro Devices Inc. If you’d like a quick quote for NSN 5962-01-075-7602, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
Alternative NSN: 5962-01-075-7602 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 010757602 |
NCB Code: USA (01) |
Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Intersil Inc , Mmi Amd , Philips Semiconductors Ltd , Raytheon Company |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
18007 | mmi amd | microcircuit memory | Avl | RFQ |
82S137F | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
932883-204 | raytheon company | microcircuit memory | Avl | RFQ |
B2052-204 | intersil inc | microcircuit memory | Avl | RFQ |
CC5194-204 | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
DH75703-204 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
HM9-7643-B2052-204 | intersil inc | microcircuit memory | Avl | RFQ |
MM5353J | mmi amd | microcircuit memory | Avl | RFQ |
ROM PROM FAMILY 017 | dla land and maritime | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010757602
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 82577-932883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
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