Browse NSN 5962-01-104-8731 Listing of Microcircuit Memory
It is our pleasure to inform you that part number ROM PROM FAMILY 013, 1816-0896, HM1-7603-5, IM5610CPE, 1816-0896 listed under NSN 5962-01-104-8731 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Dla Land And Maritime, Hewlett Packard Co, Intersil Inc, Keysight Technologies Inc, Mmi Amd. If you’d like a quick quote for NSN 5962-01-104-8731, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-104-8731 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011048731 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Hewlett Packard Co , Intersil Inc , Keysight Technologies Inc , Mmi Amd , Texas Instruments Incorporated |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM PROM FAMILY 013 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 1816-0896 | hewlett packard co | microcircuit memory | Avl | RFQ |
| HM1-7603-5 | intersil inc | microcircuit memory | Avl | RFQ |
| IM5610CPE | intersil inc | microcircuit memory | Avl | RFQ |
| 1816-0896 | keysight technologies inc | microcircuit memory | Avl | RFQ |
| 6331-1J | mmi amd | microcircuit memory | Avl | RFQ |
| TBP18S030N | texas instruments incorporated | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011048731
| MRC | Criteria | Characteristic |
|---|---|---|
| ABKW | OVERALL HEIGHT | 0.400 INCHES MAXIMUM |
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMED AND 3-STATE OUTPUT AND HIGH SPEED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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